MIMMG400K120U6UN 1200v 4 0 0 a igb t module r oh s c om plia nt fea t ures ultra lo w l o ss high r u g g e dness high s hort circuit c a p a bilit y positive t e mperatur e coe f ficient w i th fa s t free-w h e e l i ng diod e s 5k ? ga te pro te cted res i st ance in si de applica t ions inverter conv ertor w elder smps and ups inductio n h eatin g absolut e maximum ra tings t c = 25c u n less other w i se specifi e d t i n u s e u l a v s n o i t i d n o c t s e t r e t e m a r a p l o b m y s igbt v c e s v 0 0 2 1 e g a t l o v r e t t i m e - r o t c e l l o c v ges gate - emitter v o lt age 20 v t c a 0 0 6 c 5 2 = i c dc col l ector c u rrent t c a 0 0 4 c 5 6 = t c = 25c, t p = 1 ms 120 0 a i c pul s pulse d col l ect o r curre nt t c = 65c, t p = 1 ms 800 a p t o t w 5 8 7 1 t b g i r e p n o i t a p i s s i d r e w o p t j c 0 5 1 + o t 0 4 - e g n a r e r u t a r e p m e t n o i t c n u j t s t g c 5 2 1 + o t 0 4 - e g n a r e r u t a r e p m e t e g a r o t s v iso l v 0 0 0 3 n i m 1 = t , c a e g a t l o v t s e t n o i t a l u s n i free-wheeling diode v rrm v 0 0 2 1 e g a t l o v e s r e v e r e v i t i t e p e r t c a 0 0 6 c 5 2 = i f(a v ) a vera ge fo r w a rd curre nt t c a 0 0 4 c 5 6 = i frm rep e ti tive peak fo r w a r d curr ent t p a 0 0 8 s m 1 = t v j =45c , t= 1 0 ms, sine 255 0 a i fsm non-r e p e ti tive surge f o r w a rd c u rre nt t v j =45c , t= 8 . 3ms, sine 285 0 a
MIMMG400K120U6UN electrical charact e r ist i cs t c = 25c unl ess other w i se specifi ed thermal and mechanica l charac t eristics sy mbol pa rame ter t est condit i o n s min. t y p. max. unit igbt v ge( t h ) ga te - emitter t h reshold v o l t age v c e = v g e , i c = 16ma 4 .5 5 .5 6 .5 v i c = 400a, v g e =15v , t v j =125c 3.2 v v c e (sa t ) collector - emitter saturatio n v o l t age i c = 400a, v g e =15v , t v j =125c 3.85 v i c e s coll ector l e a k age c u rrent v c e = 1200 v , v g e = 0 v , t v j =25c 5 ma i ges gate leak age current v c e = 0 v , v g e = 20v -400 400 na r g int 3 . 1 r o t s i s e r e t a g d e t a r g e t n i q g e gate charge v c c = 600 v , i c =400a , v g e = 15v 4.2 c c i e s f n 6 2 e c n a t i c a p a c t u p n i c r e s revers e t ransfer cap a c i t anc e v c e = 25v , v g e = 0 v , f =1mhz 1 . 8 n f t d ( on) s n 0 0 1 e m i t y a l e d n o - n r u t t r s n 0 6 e m i t e s i r t d ( o f f ) s n 0 3 5 e m i t y a l e d f f o - n r u t t f fall t i me v c c = 600 v , i c =400a r g =2.5 , v g e = 15v t v j =125c inductive l o ad 40 n s t d ( on) s n 0 1 1 e m i t y a l e d n o - n r u t t r s n 0 7 e m i t e s i r t d ( o f f ) s n 0 5 5 e m i t y a l e d f f o - n r u t t f fall t i me v c c = 600 v , i c =400a r g =2.5 , v g e = 15v t v j =125c inductive l o ad 50 n s 28 mj e o n t u rn - on s w itc h i n g ener g y 38 mj 19 mj e o f f t u rn - o f f s w i tchin g ener g y v c c = 600 v , i c = 400a t v j =25c r g =2.5 t v j =125 c v g e = 15v t v j =25c inductive l o ad t v j =125 c 24 mj free-wheeling diode i f = 400a , v g e =0v , t v j =25c 1.95 v v f f o r w ard v olt age i f = 400a , v g e =0v , t v j =125c 1.95 v i rrm a 0 5 4 t n e r r u c y r e v o c e r e s r e v e r . x a m q r r c 0 5 e g r a h c y r e v o c e r e s r e v e r e r e c revers e recove r y e nergy i f = 400a , v r = 600v d i f /d t= -400 0a/ s t v j =125c 18 mj sy mbol para mete r t est condit i o n s min. t y p. max. unit r thjc junctio n -to-ca se t hermal r e sist ance per igb t 0.07 k / w r t hjcd junctio n -to-ca se t hermal r e sist ance per inverse d i ode 0.12 k / w t orque modu le-to-si n k recomme n d e d m6 3 5 n m t orque modu le electro des recomme n d e d m6 2.5 5 n m t orque modu le electro des recomme n d e d m4 0.7 1.1 n m w e ight 325 g
MIMMG400K120U6UN i c (a) v c e v f i gure 1 . t y pic a l output chara cteristics t v j =125c t v j =25c 800 600 200 0 0 1 2 3 4 5 8 0 200 v c e v f i gure 2 . t y pic a l output chara cteristics 4 3 1 0 0 200 i c (a) 400 900 v g e v f i gure 3 . t y pic a l t ransfe r char a cte ri sti cs 0 4 0 0 0 5 20 e on e off ( mj ) e o n e o f f r g f i gure 4 . s w itc h i n g ener g y vs. gate resistor v ce = 600v i c =400 a v g e =15v t v j =125c 0 200 i c a f i gure 5 . s w itc h in g ener g y vs . collector c u rr ent v ce =600v r g = 2 . 5 v g e = 15v t v j =125c 800 400 0 200 600 800 100 0 120 0 v c e v f i gure 6 . reve r se biase d sa fe opera ting are a 140 0 t v j =125c 2 5 6 v g e =15v 160 i c (a) 320 800 t v j =25c t v j =125c v c e =20v e o f f e o n 1 2 10 9 7 6 5 8 0 20 80 120 e on e off ( mj ) r g = 2 . 5 ? v g e =15v t v j =125c i c (a) 6 1 1 480 400 800 600 400 200 0 640 100 160 600 1 0 15 25 3 0 120 600 800 40 60 400
MIMMG400K120U6UN z t hj c ( k/w ) e rec ( mj ) 30 20 10 0 200 i f (a) f i gure 9 . s w itc h in g ener g y vs . fo r w ard c u rr ent 800 600 400 0 rect a n gul ar pulse d u ratio n (secon ds) f i gure 10. t ransient t hermal imped ance of diod e z t hj c ( k/w ) 40 50 rect a n gul ar pulse d u ratio n (secon ds) f i gure1 1. t ransient t hermal i mped ance of igbt 0 . 001 0.01 0.1 1 10 0 . 001 0.01 0.1 0 . 001 0 . 0 1 0 . 1 1 1 0 0.001 0.01 1 0.1 r g = 2 . 5 ? v ce = 600v t v j =125c e rec ( mj ) r g f i gure 8 . s w itc h in g en erg y vs . gate resistor v f v f i gure 7 . diode fo r w a r d c h a r acteristics 1 0 3 2 0 0 200 800 400 i f ( a ) t v j =125c t v j =25c 2 4 1 6 8 0 4 0 4 i f =400 a v ce = 600v t v j =125c 600 3 2 2.5 5 7.5 12.5 10
MIMMG400K120U6UN dimens i o ns in mm f i gure 12. pack age outli nes
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